Ce:YAG
Ce:YAG is a fast scintillator with excellent mechanical and chemical resistance.Ce:YAG scintillation detectors are preferred for electron microscopy,beta and X-ray counting,as well as for electron and X-ray imaging screens.The material's mechanical properties enable production of thin screens down to 0.005 mm thick.Does not degrade when bombarded by
electrons or ions,thus making Ce:YAG suitable for high current operations.Light emission
peaks at about 560nm(yellow)which means that an S20 photomultiplier is most suitable for
detecting the emission.Response is better for Ce:YAG than for Planotec P47 discs below 5kV and again at higher accelerating voltages over 100kV,where the performance of powder scintillators falls off while
Ce:YAG response increases linearly.Although the signal from Ce:YAG and Ce:YAP is less than the P47,the S/N ratio is better and therefore the final signal is better.Decay time approx.60 nanoseconds.The side towards the light quide is mi-cro-textured to increase light emission.Can be cleaned (polished)and recoated.Best to coat with 50nm Al to avoid light sensitivity.
Technical parameters of Ce:YAG
Dopant concentration | Ce:(0.1～1.2)atm%±0.1% |
Orientation: | <111>or<100]>crystalline within ±05° |
Wavefront distortion: | λ/8 per inch @633 nm |
Dimension Tolerances | Rods with diameter:±0.05 mm,Length:±0.5 mm |
Surface quality; | 10/5 Scratch /Digper MIL-O-1380A |
Parallelism: | <10 arc seconds |
Perpendicularity; | <5 arc minutes |
Flatness: | <λ/10 @633 nm |
chamfer: | <0.1 mm @45deg. |
Barrel Finish: | 50-80 micro-inch (RMS), |
Coating | AR,HR,Al coating are available |
Physical properties of Ce:YAG
Crystal structure | M3 |
Crystal orientation | <111> |
Unit cell constant | a=12.01A |
Density | 4.56(g/cm³) |
Hardness | 8.5(mohs) |
Melt point | 1970C |
Thermal expansion | 7.8x10⁶/C |
Surface rough | Surface roughness(Ra):<=5A |
Polishing | Single or double |
